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AP603
Product Features
* 800 - 2200 MHz * +38.5 dBm P1dB * -50 dBc ACLR @ 1W PAVG * -51 dBc IMD3 @ 1W PEP * 15% Efficiency @ 1W PAVG * Internal Active Bias
High Dynamic Range 7W 28V HBT Amplifier
Product Description
The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compressed 1dB power.
Functional Diagram
IMD3 (dBc)
The AP603 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device * Internal Temp Compensation incorporates proprietary bias circuitry to compensate for * Capable of handling 7:1 VSWR @ variations in linearity and current draw over temperature. The module does not require any negative bias voltage; an 28 Vcc, 2.14 GHz, 5.5W CW Pout internal active bias allows the AP603 to operate directly off a commonly used high voltage supply (typically +24 to * Lead-free/RoHS-compliant +32V). An added feature allows the quiescent bias to be 5x6 mm power DFN package adjusted externally to meet specific system requirements.
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
-30 -40 -50 -60 -70 -80 26 28 30 32 34 Output Power, PEP (dBm)
80 mA 160 mA 260 mA
Applications
* Mobile Infrastructure * High Power Amplifier (HPA)
The AP603 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure.
36
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Operational Bandwidth Test Frequency Output Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +30 dBm PEP PIN_VPD Current, Ipd Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
Units Min
MHz MHz dBm dB dB dB dBc dBc mA mA % dBm mA V V 800
Typ
2140 +30 11.8 10 8.2 -50 -51 4 246 14.6 +38.2 160 +5 +28
Max
2200
Parameter
Test Frequency Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +30 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
Units
MHz dBm dB dB dB dBc dBc mA % dBm mA V V 940 +30 17 11 5.5 -52 -52 217 16.6 +38.5
Typical
1960 +30 13 13 7.5 -49 -52 230 15.5 +38.5 160 +5 +28 2140 +30 11.8 10 8.2 -50 -51 246 14.6 +38.2
Absolute Maximum Rating
Parameter
Storage Temperature, Tstg Junction Temperature, TJ
For 106 hours MTTF
Notes: 1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25 C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More information is given in the other parts of this datasheet. 2. The AP603 evaluation board has been tested for ruggedness to be capable of handling: 7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout, 5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout, 3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.
Rating
-55 to +125 C 192 C Input P6dB 80 V @ 0.1 mA 51 V @ 0.1 mA 320 mA 9.5 W
Ordering Information
Part No.
AP603-F AP603-PCB900 AP603-PCB1960 AP603-PCB2140
RF Input Power (CW tone), Pin Breakdown Voltage C-B, BVCBO Breakdown Voltage C-E, BVCEO Quiescent Bias Current, ICQ Power Dissipation, PDISS
Description
High Dynamic Range 28V 7W HBT Amplifier 920-960 MHz Evaluation board 1930-1990 MHz Evaluation board 2110-2170 MHz Evaluation board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 1 of 14 May 2007 ver 1
AP603
40 35 30 25 Gain (dB) 20 15
High Dynamic Range 7W 28V HBT Amplifier
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 160 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Gain / Maximum Stable Gain
0.8
Typical Device Data
S11
1.0
S22
1.0
2.
0
2.
0
DB(|S(2,1)|)
DB(GMax())
0. 4
6 0.
6 0.
Swp Max 3.00001GHz
Swp Max 3.00001GHz
0.8
3.
0
0 4.
10.0
10.0
10 5 0 -5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
-0
.4
-0
.4
-0 .6
-2
-0 .6
Swp Min 3e-005GHz
-0.8
-0.8
-
0 2.
.0
Swp Min 3e-005GHz
-1.0
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments.
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-2.63 -1.78 -0.92 -0.64 -0.53 -0.52 -0.46 -0.44 -0.38 -0.39 -0.48 -0.59 -0.73 -0.97 -1.21 -1.28 -1.18
-169.40 -170.62 -173.99 -177.96 -178.87 -178.84 -177.79 -177.25 -176.83 -177.55 -179.87 175.92 170.02 163.30 157.14 153.30 152.21
25.54 23.33 19.08 13.40 9.88 7.52 5.42 4.01 2.93 2.22 1.77 1.54 1.41 1.23 0.75 0.03 -0.89
146.01 132.51 109.79 93.01 85.15 79.52 74.40 69.71 64.99 59.81 52.82 44.04 33.03 19.79 3.56 -14.33 -34.56
-40.50 -38.11 -36.04 -35.59 -35.72 -35.90 -35.68 -35.62 -35.48 -35.13 -34.75 -34.21 -33.63 -33.13 -32.89 -33.04 -33.44
55.97 39.21 21.60 9.15 3.39 6.93 5.88 3.23 1.79 -0.56 -4.12 -10.23 -18.12 -29.67 -43.94 -61.10 -81.90
-1.32 -3.07 -5.00 -6.06 -5.82 -5.38 -4.77 -4.16 -3.62 -3.12 -2.63 -2.19 -1.74 -1.28 -0.90 -0.57 -0.45
-1.0
-45.78 -67.75 -104.04 -129.02 -136.33 -138.25 -139.20 -139.65 -139.95 -140.63 -142.14 -144.85 -149.24 -155.12 -162.55 -170.87 -178.70
Device S-parameters are available for download off of the website at: http://www.wj.com
Load-Pull Data
Test condition: Output Power = 29.5 dBm, VCC = +28 V, ICQ = 160 mA, ZS = 50 Test signal = W-CDMA (PAR=8.6dB @ 0.01% Probability), 2140 MHz The reference plane is at the AP603-PCB2140 eval board's SMA connectors. The plots are shown to detail the optimization of the ACLR performance.
Gain Load-Pull
ACLR Load-Pull
PAE Load-Pull
GAIN Max=13.08 dB at 76.9-j37.0
ACPR1LO Min=-50.98 dBc at 57.9-j2.6
P.A.EFF Max=16.98 % at 34.4-j49.7
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 14 May 2007 ver 1
-4 .0 -5. 0
-3
.0
-4 .0 -5. 0
2 -0.
2 -0.
-10.0
0.2
5.0
0.
4
3.
0
0 4.
5.0
-10.0
-3
.0
0.2
10.0
AP603
High Dynamic Range 7W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
PCB Material: 0.0147" Rogers Ultralam 2000, single layer, 1 oz Cu, r = 2.45, Microstrip line details: width = .042", spacing = .050"
Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
The following bias procedure is recommended to ensure proper functionality of AP603 in a laboratory environment. The sequencing is not required in the final system application.
Bias. Vcc Vbias Vpd Voltage (V) +28 +5 +5
Turn-on Sequence:
1. 2. 3. 4. 5. 1. 2. 3. 4. Notes: 1. 2. 3. Attach input and output loads onto the evaluation board. Turn on power supply Vcc = +28V. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25A). Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 160mA. Turn on RF power. Turn off RF power. Turn off power supply Vpd = +5V. Turn off power supply Vbias = +5V. Turn off power supply Vcc = +28V. Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2 results in a lower Icq. Icq should not be increased above 320mA. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq quiescent current setting. Ipd can be up to 8mA at a quiescent current setting of 320mA. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 8mA on the AP603.
Turn-off Sequence:
Ipd vs Icq
8
Ibias (mA)
Ibias vs Output Power
8 6 4 2 0
Ipd (mA)
6 4 2 0 0 100 200 300 400
22
24
26
28
30
32
Icq Setting (mA)
Output Average Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 3 of 14 May 2007 ver 1
AP603
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +30 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 7W 28V HBT Amplifier
869-894 MHz Reference Design
Typical WCDMA Performance at 25 C at a channel power of +30 dBm
880 MHz +30 dBm 18 dB 11 dB 7.5 dB -52 dBc -52 dBc 220 mA 16.5 % +38.5 dBm 160 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF
C28 6.8 pF See note 4 6.8 nH See note 5
L24 2.2 nH See note 3
C31 3.3 pF See note 6
L24
C28
L4 C31
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L24 is placed at 0.090" (3.5 @ 880 MHz) from the center of C5. 4. The center of C28 is placed at 0.220" (8.4 @ 880 MHz) from the edge of the AP603 (U1). 5. The center of L4 is placed at 0.200" (7.7 @ 880 MHz) from the edge of the AP603 (U1). 6. The center of C31 is placed at 0.360" (13.8 @ 880 MHz) from the center of L4. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 8. The main RF trace is cut at component C28 and L4 for this particular reference design.
869-894 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
19 18
S11, S22 (dB)
0
60
Collector Efficiency (%)
869 MHz 880 MHz 894 MHz
-5 -10 -15 -20 -25 0.75
50 40 30 20 10 0
Gain (dB)
17 16
869 MHz
15 14 30
880 MHz 894 MHz
S11 S22
32
34
36
38
40
0.8
0.85
0.9
0.95
14
18
22
26
30
34
38
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
IMD vs. Output Power
CW 2-tone signal, 880 MHz, f = 1 MHz, 28V, 160 mA Icq, 25 C
-40
869 MHz
-50
Collector Efficiency (%)
25
869 MHz
-45
880 MHz 894 MHz
-55
IMD (dBc)
20 15 10 5 0
880 MHz 894 MHz
ACLR1 (dBc)
-50 -55 -60 -65 22 24 26 28 30 32
-60 -65 -70
IMD3L IMD3U IMD5
-75 26 28 30 32 34 36 Average Output Power (dBm) Output Power, PEP (dBm)
22
24
26
28
30
32
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 14 May 2007 ver 1
AP603
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +30 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 7W 28V HBT Amplifier
920-960 MHz Application Circuit (AP603-PCB900)
Typical WCDMA Performance at 25 C at a channel power of +30 dBm
940 MHz +30 dBm 17 dB 11 dB 5.5 dB -52 dBc -52 dBc 217 mA 16.6 % +38.5 dBm 160 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF
1.8 Ohm 5.6pF See note 3 See note 4
See note 5 See note 6
L3
C5
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C24 is placed at 0.245" (10.0 @ 940 MHz) from the center of C5. 4. The center of C5 is placed at .060" (2.5 @ 940 MHz) from the edge of the AP603 (U1). 5. The center of L4 is placed at 0.170" (7.0 @ 940 MHz) from the edge of the AP603 (U1). L4 is required to be an AVX 0805 type. 6. The center of C25 is placed at 0.480" (19.7 @ 940 MHz) from the center of L4. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 8. The main RF trace is cut at component L3 and L4 for this particular reference design.
920-960 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
Collector Efficiency (%)
18 17
0 -5
50 40 30 20 10 0
920 MHz 940 MHz 960 MHz
16 15
920 MHz
S11, S22 (dB)
Gain (dB)
-10 -15 -20 -25
14 13 30
940 MHz 960 MHz
S11 S22
32
34
36
38
40
0.8
0.85
0.9
0.95
1
1.05
1.1
14
18
22
26
30
34
38
Output Power (dBm)
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 160 mA Icq, 25 C
-40
920 MHz
-50
Collector Efficiency (%)
25
920 MHz
-45
940 MHz 960 MHz
-55
IMD (dBc)
20 15 10 5 0
940 MHz 960 MHz
ACLR1 (dBc)
-50 -55 -60 -65 22 24 26 28 30 32
-60 -65
IMD3L
-70 -75 26 28 30 32 34 Average Output Power (dBm) Output Power, PEP (dBm)
IMD3U IMD5
36
22
24
26
28
30
32
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 14 May 2007 ver 1
AP603
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +30 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Circuit (AP603-PCB1960)
Typical WCDMA Performance at 25 C at a channel power of +30 dBm
1960 MHz +30 dBm 13 dB 13 dB 7.5 dB -49 dBc -52 dBc 230 mA 15.5 % +38.5 dBm 160 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF
W = .030" L = 1.035" L3 100pF 4.7nH See note 3 100pF C29 1.2pF See note 6
C5 3.3pF See note 4
C28 3.3pF See note 5
L3
C5
C28
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.115" (9.8 @ 1960 MHz) from the center of C5. 4. The center of C5 is placed at 0.100" (8.5 @ 1960 MHz) from the edge of the AP603 (U1). 5. The center of C28 is placed at 0.300" (25.6 @ 1960 MHz) from the edge of the AP603 (U1). 6. The center of C29 is placed at 0.420" (35.9 @ 1960 MHz) from the center of C28. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
14 13
S11, S22 (dB)
0
50
Collector Efficiency (%)
1930 MHz
-5 -10 -15 -20 -25
40 30 20 10 0
1960 MHz 1990 MHz
Gain (dB)
12 11
1930 MHz
10 9 30
1960 MHz 1990 MHz
S11 S22
32
34
36
38
40
1.8
1.85
1.9
1.95
2
2.05
2.1
22
26
30
34
38
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
-40 -45
275
1960 MHz 1990 MHz
25
250 225 200 175 150
Collector Efficiency (%)
Collector Current (mA)
1930 MHz
1930 MHz 1960 MHz 1990 MHz
1930 MHz
20 15 10 5 0
1960 MHz 1990 MHz
ACLR1 (dBc)
-50 -55 -60 -65 22 24 26 28 30 32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 14 May 2007 ver 1
AP603
14
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 1960 MHz, 25 C
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 1960 MHz, 25 C
50
Collector Efficiency (%)
26 V
40 30 20 10 0
28 V 30 V 32 V
Gain (dB)
13
26 V
12
28 V 30 V 32 V
11 22 26 30 34 38
22
26
30
34
38
Output Power (dBm) ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 1960 MHz, 25 C
Output Power (dBm) Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 1960 MHz, 25 C
-40
25
Collector Efficiency (%)
26 V
26 V
-45
28 V 30 V
20 15 10 5 0
28 V 30 V 32 V
ACLR1 (dBc)
-50 -55 -60 -65 22
32 V
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm) OIP3 vs. Output Power vs. Vcc
CW 2-tone signal, 1960 MHz, f = 1 MHz, Icq = 160 mA, 25 C
Average Output Power (dBm) IMD3 vs. Output Power vs. Vcc IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 1960 MHz, f = 1 MHz, Icq = 160 mA, 25 C
CW 2-tone signal, 1960 MHz, f = 1 MHz, Icq = 160 mA, 25 C
55 50
OIP3 (dBm) IMD3 (dBc)
-35 -40 -45 -50 -55 -60 -65 26 28 30 32 34 36 26
26 V 28 V 30 V 32 V
-50 -55
IMD5 (dBc)
26 V 28 V 30 V
45
26 V
-60 -65 -70 -75
32 V
40 35 30 Output Power, PEP (dBm)
28 V 30 V 32 V
28
30
32
34
36
26
28
30
32
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
1930-1990 MHz Application Note: Changing Icq Biasing Configurations
The AP603 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 160 mA as the quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade the device's efficiency. Measured data shown in the plots below represents the AP603 measured and configured for 1.96 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Icq (mA) 20 40 80 120 160 200 260 320 R2 () 4.32k 2.33k 1.24k 852 649 521 398 313 VPD (V) 5 5 5 5 5 5 5 5 PIN_VPD (V) 2.46 2.52 2.61 2.68 2.74 2.80 2.89 2.98
Thermal Rise vs. Output Power vs. Icq
VBIAS GND VPD VCC
Vcc = 28V
100
20 mA
Thermal Rise (C)
80 60 40 20 0 18
40 mA 80 mA
C7
120 mA 160 mA 200 mA 260 mA 320 mA
100pF L3 4.7 nH C5 3.3pF
1000pF
W = .030" L = 1.035"
C28 3.3pF
C29 1.2pF
100pF
20
22
24
26
28
30
32
Output Power (dBm)
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 C
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 C
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 1960 MHz, 25 C
Collector Efficiency (%)
-35 -40
ACLR1 (dBc) Collector Current (mA)
400 300 200 100 0 32 22 24 26
20 mA 80 mA 160 mA 260 mA 40 mA 120 mA 200 mA 320 mA
25 20 15 10 5 0 22
20 mA 80 mA 160 mA 260 mA
40 mA 120 mA 200 mA 320 mA
-45 -50 -55 -60 -65 22 24 26
20 mA 80 mA 160 mA 260 mA 40 mA 120 mA 200 mA 320 mA
28
30
28
30
32
24
26
28
30
32
Average Output Power (dBm) Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 1960 MHz, 25 C
Average Output Power (dBm) Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 1960 MHz, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 1960 MHz, 25 C
Collector Efficiency (%)
14
Output Power (dBm)
38 34 30 26 22 10 14 18 Input Power (dBm) IMD3 vs. Output Power vs. Icq
CW Two-tone signal, 1960 MHz, f = 1 MHz, Vcc = 28V, 25 C
50
20 mA 40 mA 120 mA 200 mA 320 mA
13
Gain (dB)
40 30 20 10 0
80 mA 160 mA 260 mA
12 11 10 9 22
20 mA 160 mA 40 mA 200 mA 80 mA 260 mA 120 mA 320 mA
20 mA 80 mA 160 mA 260 mA
40 mA 120 mA 200 mA 320 mA
26
30 Output Power (dBm)
34
38
22
26
22
26
30 Output Power (dBm)
34
38
OIP3 vs. Output Power vs. Icq
CW Two-tone signal, 1960 MHz, f = 1 MHz, Vcc = 28V, 25 C
IMD5 vs. Output Power vs. Icq
CW Two-tone signal, 1960 MHz, f = 1 MHz, Vcc = 28V, 25 C
55 50
OIP3 (dBm) IMD3 (dBc)
-20 -30 -40 -50
20 mA 160 mA 40 mA 200 mA 80 mA 260 mA 120 mA 320 mA
20 mA 160 mA
40 mA 200 mA
80 mA 260 mA
120 mA 320 mA
-20 -30
IMD5 (dBc)
20 mA 160 mA
40 mA 200 mA
80 mA 260 mA
120 mA 320 mA
45 40 35 30 26 28
-40 -50 -60 -70
-60 26 28 30 32 34 36 Output Power, PEP (dBm)
-80 26 28 30 32 34 36 Output Power, PEP (dBm)
30
32
34
36
Output Power, PEP (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 14 May 2007 ver 1
AP603
Frequency Total Output Power Power Gain Input Return Loss Output Return Loss IMD3 @ +30 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 7W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25 C at an output power of +30 dBm
2015 MHz +30 dBm 12.3 dB 11 dB 14 dB -48 dBc 230 mA 15.5 % +38.2 dBm 160 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF W= 0.030" L = 1.000"
5.6pF See note 4 1.8pF See note 3
C25 0.8pF See note 5
See note 6
C30 3.3pF See note 7
0.8pF See note 8
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.185" (16.3 @ 2015 MHz) from the center of C1. 4. The center of C1 is placed at 0.705" (61.9 @ 2015 MHz) from the center of C25. 5. The center of C25 is placed at 0.140" (12.3 @ 2015 MHz) from the center of C5. 6. The center of C5 is placed at 0.125" (11.0 @ 2015 MHz) from the edge of the AP603 (U1). 7. The center of C30 is placed at 0.250" (41.2 @ 2015 MHz) from the edge of the AP603 (U1). 8. The center of C19 is placed at 0.490" (43.0 @ 2015 MHz) from the center of C23. 9. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
13 12
S11, S22 (dB)
0
50
Collector Efficiency (%)
2000 MHz 2010 MHz 2025 MHz
-5 -10 -15 -20 -25 1.96
40 30 20 10 0
Gain (dB)
11 10 9 8 30
2000 MHz 2015 MHz 2025 MHz
S11 S22
1.98 2 2.02 2.04 2.06 2.08
32
34
36
38
40
22
26
30
34
38
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 C
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 C
ACLR vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 C
-40 -45
ACLR1 (dBc)
-45
ACLR (dBc)
Collector Efficiency (%)
-50 -55 -60 -65 20
140 mA 160 mA 180 mA 200 mA
-40
PAR = 9.6 dB @ 0.01% prob IQ Mod Filter : 2.1 MHz Sample clock: 32 MHz BW = 1.28 MHz
10
2010 MHz
8 6 4 2 0
2015 MHz 2025 MHz
-50 -55 -60 -65
ACLR1 ACLR2
PAR = 9.6 dB @ 0.01% prob IQ Mod Filter : 2.1 MHz Sample clock: 32 MHz BW = 1.28 MHz
PAR = 9.6 dB @ 0.01% prob IQ Mod Filter : 2.1 MHz Sample clock: 32 MHz BW = 1.28 MHz
21
22
23
24
25
26
27
20
21
22
23
24
25
26
27
20
21
22
23
24
25
26
27
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 14 May 2007 ver 1
AP603
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +30 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Circuit (AP603-PCB2140)
Typical WCDMA Performance at 25 C at a channel power of +30 dBm
2140 MHz +30 dBm 11.8 dB 10 dB 8.2 dB -50 dBc -51 dBc 246 mA 14.6 % +38.2 dBm 160 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF W = 0.030" L = 0.980"
See note 4 0.8pF See note 3
See note 5
See note 6
See note 7
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.185" (17.3 @ 2140 MHz) from the center of C1. 4. The center of C1 is placed at 0.860" (80.2 @ 2140 MHz) from the center of C5. 5. The center of C5 is placed at 0.085" (7.9 @ 2140 MHz) from the edge of the AP603 (U1). 6. The center of C23 is placed at 0.245" (22.9 @ 2140 MHz) from the edge of the AP603 (U1). 7. The center of C19 is placed at 0.475" (44.3 @ 2140 MHz) from the center of C23. 8. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
Collector Efficiency (%)
12 11
0 -5
S11, S22 (dB)
50 40 30 20 10 0
2110 MHz 2140 MHz 2170 MHz
Gain (dB)
10 9
2110 MHz
-10 -15 -20 -25
8 7 30
S11 S22
2 2.05 2.1 2.15 2.2 2.25 2.3
2140 MHz 2170 MHz
32
34
36
38
40
22
26
30
34
38
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
2110 MHz
275 250 225 200 175 150
Collector Efficiency (%)
Collector Current (mA)
-40 -45
2140 MHz 2170 MHz
300
2110 MHz 2140 MHz 2170 MHz
25
2110 MHz
20 15 10 5 0
2140 MHz 2170 MHz
ACLR1 (dBc)
-50 -55 -60 -65 22 24 26 28 30 32
22
24
26
28
30
32
22
24
26
28
30
32
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 10 of 14 May 2007 ver 1
AP603
14 13
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 160 mA, 2140 MHz
600 500 400 300 200 100 22 26 30 34 38 22 26 30 34 38
50
Collector Efficiency (%)
Collector Current (mA)
-40 C 25 C 85 C
-40 C
40 30 20 10 0 22
25 C 85 C
Gain (dB)
12 11
-40 C
10 9
25 C 85 C
26
30
34
38
Output Power (dBm)
Output Power (dBm) ACLR1 vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 160 mA, 2140 MHz
Output Power (dBm) Efficiency vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 160 mA, 2140 MHz
AM-PM vs. Input Power
2140 MHz, Vcc = 28V, Icq = 160 mA, 25 C
12
Gain (dB) / Phase (deg)
-35
25
11 10
Gain
ACLR1 (dBc)
Collector Efficiency (%)
-40 C
-40 C
-40 -45 -50 -55 -60
25 C 85 C
20 15 10 5 0
25 C 85 C
Phase
9 8 7 18 20 22 24 26 28
22
24
26
28
30
32
22
24
26
28
30
32
Input Power (dBm)
Gain vs. Frequency vs. Temperature
WCDMA, Vcc = 28V, Icq = 160 mA, +30 dBm Pout
Average Output Power (dBm) ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 2140 MHz, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 160 mA, 2140 MHz, 25 C
13 12
-40 -45
25
28 V 30 V
Collector Efficiency (%)
26 V
26 V
20 15 10 5 0
28 V 30 V 32 V
ACLR1 (dBc)
Gain (dB)
11 10
-40 C
-50 -55 -60 -65
32 V
9 8 2110
25 C 85 C
2130
2150
2170
22
24
26
28
30
32
22
24
26
28
30
32
Frequency (MHz) Gain vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 2140 MHz, 25 C
Average Output Power (dBm) 2-Carrier WCDMA ACLR vs. Output Power
WCDMA, 101 Config, Vcc = 28V, Icq = 160 mA, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 160 mA, 2140 MHz, 25 C
13
26 V 28 V 30 V 32 V
-30
ACLR1_L
Collector Efficiency (%)
ACLR2_L ACLR_M
50
26 V
40 30 20 10 0
28 V 30 V 32 V
ACLR (dBc)
Gain (dB)
12
-40
ACLR1_U ACLR2_U
11
-50
10 22 26 30 34 38
-60 22 24 26 28 30 32
22
26
30
34
38
Output Power (dBm)
Total Average Output Power (dBm)
Output Power (dBm)
OIP3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, f = 1 MHz, Icq = 160mA, 25 C
IMD3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, f = 1 MHz, Icq = 160mA, 25 C
IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, f = 1 MHz, Icq = 160mA, 25 C
60 55
OIP3 (dBm) IMD3 (dBc)
-30 -40 -50
26 V
-30 -40
IMD5 (dBc)
26 V 28 V 30 V
50 45 40 35 26
26 V 28 V 30 V 32 V
-50 -60 -70 -80
32 V
-60 -70 -80
28 V 30 V 32 V
28
30
32
34
36
26
28
30
32
34
36
26
28
30
32
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 11 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP603 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 160 mA as the quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade the device's efficiency. Measured data shown in the plots below represents the AP603 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Icq (mA) 20 40 80 120 160 200 260 320 R2 () 4.32k 2.33k 1.24k 852 649 521 398 313 VPD (V) 5 5 5 5 5 5 5 5 PIN_VPD (V) 2.46 2.52 2.61 2.68 2.74 2.80 2.89 2.98
Thermal Rise vs. Output Power vs. Icq
VBIAS GND VPD VCC
Vcc = 28V
100
20 mA
Thermal Rise (C)
80 60 40 20 0 18
40 mA 80 mA
C7
120 mA 160 mA 200 mA 260 mA 320 mA
0.8pF
1000pF W = 0.030" L = 0.980"
20
22
24
26
28
30
32
Output Power (dBm)
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Collector Efficiency (%)
-30
Collector Current (mA)
400 300 200 100 0
20 mA 80 mA 160 mA 260 mA 40 mA 120 mA 200 mA 320 mA
25 20 15 10 5 0 22
20 mA 80 mA 160 mA 260 mA
40 mA 120 mA 200 mA 320 mA
ACLR1 (dBc)
-40 -50 -60 -70 22
20 mA 160 mA 40 mA 200 mA 80 mA 260 mA 120 mA 320 mA
24
26
28
30
32
22
24
26
28
30
32
24
26
28
30
32
Average Output Power (dBm) Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Average Output Power (dBm)
Average Output Power (dBm) Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Collector Efficiency (%)
14
Output Power (dBm)
20 mA 40 mA 200 mA 80 mA 260 mA 120 mA 320 mA
38
160 mA
50
20 mA 40 mA 120 mA 200 mA 320 mA
13
Gain (dB)
34 30 26 22
40 30 20 10 0 22
80 mA 160 mA 260 mA
12 11 10 9 22 26 30 Output Power (dBm)
OIP3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
20 mA 80 mA 160 mA 260 mA
40 mA 120 mA 200 mA 320 mA
34
38
12
16
20 Input Power (dBm)
24
28
26
30 Output Power (dBm)
34
38
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
IMD5 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
60 55
OIP3 (dBm) IMD3 (dBc)
-20 -30 -40 -50 -60 -70 -80 26 28 30 32
20 mA 80 mA 160 mA 260 mA 40 mA 120 mA 200 mA 320 mA
-20
20 mA 40 mA 200 mA 80 mA 260 mA 120 mA 320 mA
-30
IMD5 (dBc)
160 mA
50 45 40 35 30 26 28 30 32
20 mA 80 mA 160 mA 260 mA 40 mA 120 mA 200 mA 320 mA
-40 -50 -60 -70 -80 26 28 30 32 34 36 Output Power, PEP (dBm)
34
36
34
36
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 12 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz High Efficiency Reference Design
Targeted for Linearized Power Amplifiers Typical WCDMA Performance at 25 C at a channel power of +32 dBm
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc 2140 MHz +32 dBm 11.5 dB 20 dB 11 dB -34 dBc 170 mA 32.5 % +38.5 dBm 40 mA +5 V +28 V
VPD GND VBIAS VCC
2.3 k
C7 1000pF W = 0.030" L = 0.980" C21
See note 4 0.8pF See note 3
3.6 pF See note 5
C28 3.6 pF See note 6
C29 0.4 pF See note 7
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.185" (17.3 @ 2140 MHz) from the center of C1. 4. The center of C1 is placed at 0.875" (81.6 @ 2140 MHz) from the center of C5. 5. The center of C5 is placed at 0.070" (6.5 @ 2140 MHz) from the edge of the AP603 (U1). 6. The center of C28 is placed at 0.190" (17.7 @ 2140 MHz) from the edge of the AP603 (U1). 7. The center of C29 is placed at 0.300" (28.0 @ 2140 MHz) from the center of C28. 8. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2110-2170 MHz High Efficiency Application Circuit Performance Plots
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
-30
Single-carrier WCDMA TM 1+64 DPCH, No Clipping, PAR = 9.5 dB @ 0.01% CCDF
-30
Single-carrier WCDMA TM 1+64 DPCH, 69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
-30
Single-carrier WCDMA TM 1+64 DPCH, 33% Clipping, PAR = 6.6 dB @ 0.01% CCDF
ACLR (dBc)
ACLR (dBc)
Uncorrected, Upper / Lower
Uncorrected, Upper / Lower
ACLR (dBc)
-40
-40
-40
Uncorrected, Upper / Lower
-50
-50
-50
-60
DPD Corrected, Upper / Lower
-60
DPD Corrected, Upper / Lower
-60
DPD Corrected, Upper / Lower
-70 22 24 26 28 30 32
-70 22 24 26 28 30 32
-70 22 24 26 28 30 32
Average Output Power (dBm) Gain vs. Output Power
CW tone, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
Average Output Power (dBm) Icc vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
Average Output Power (dBm) Efficiency vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
13
180
12
160 140 120 100 80 60
Collector Efficiency (%)
Collector Current (mA)
Single-carrier WCDMA TM 1+64 DPCH, 69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
40
Single-carrier WCDMA TM 1+64 DPCH, 69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
30
Gain (dB)
11 10 9 8 20 24 28 32 36 40
20
10
0 22 24 26 28 30 32 22 24 26 28 30 32
Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 13 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
AP603-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Drawing
Outline Drawing
Product Marking
The component will be laser marked with an "AP603-F" product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 Backside paddle Function PIN_VBIAS N/C RF IN RF Output / Vcc PIN_VPD GND
MSL / ESD Rating
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Thermal Specifications
MTTF (hours)
MTTF vs. Junction Temperature
1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 120
Parameter
Thermal Resistance, JC
Referenced from peak junction to the center of the bottomside ground paddle For 106 hours MTTF
Rating
8.7 C / W 192 C
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Junction Temperature, TJ
Max Junction Temperature, TJ,max 250 C For catastrophic failure
140
160
180
200
Junction Temperature (C)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 14 of 14 May 2007 ver 1

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